Part number:
SSH70N10A
Manufacturer:
Fairchild Semiconductor
File Size:
260.10 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR E
SSH70N10A Datasheet (260.10 KB)
SSH70N10A
Fairchild Semiconductor
260.10 KB
Advanced power mosfet.
📁 Related Datasheet
SSH7N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSH7N60B
November 2001
SSH7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produ.
SSH7N80A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
SSH7N80A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend.
SSH7N90 - N-Channel Power Mosfets
(Samsung)
.
SSH7N90A - N-Channel Power Mosfets
(Fairchild)
N-CHANNEL POWER MOSFET
SSH7N90A
FEATURES
BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance.
SSH10N60A - advanced power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSH10N60B - 600V N-Channel MOSFET
(Fairchild)
SSH10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
SSH10N70 - N-Channel Power MOSFET
(Samsung)
..
..
..
.
SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs
(Samsung)
..
..
..
.