Part number:
SSH45N20A
Manufacturer:
Fairchild Semiconductor
File Size:
292.78 KB
Description:
Advanced power mosfet.
SSH45N20A Datasheet (292.78 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) SSH45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 45 A TO-3P 1 2 3 1.Gate 2. Drain 3. Sour
SSH45N20A Datasheet (292.78 KB)
SSH45N20A
Fairchild Semiconductor
292.78 KB
Advanced power mosfet.
📁 Related Datasheet
SSH45N20B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
..
SSH45N20B
November 2001
SSH45N20B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect.
SSH40N15 - N-CHANNEL POWER MOSFET
(Samsung semiconductor)
.
SSH40N20 - N-CHANNEL POWER MOSFET
(Samsung semiconductor)
.
SSH4N70 - (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS
(Samsung semiconductor)
..
w
w
w
a t a D .
S
4 t e e h
U
m o .c
..
w
w
w
a t a D .
S
4 t e e h
U
m o .c
..co.
SSH4N80 - (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS
(Samsung semiconductor)
..
w
w
w
a t a D .
S
4 t e e h
U
m o .c
..
w
w
w
a t a D .
S
4 t e e h
U
m o .c
..co.
SSH10N60A - advanced power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSH10N60B - 600V N-Channel MOSFET
(Fairchild)
SSH10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
SSH10N70 - N-Channel Power MOSFET
(Samsung)
..
..
..
.
