SSH45N20A Datasheet, Mosfet, Fairchild Semiconductor

SSH45N20A Features

• Mosfet Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low

PDF File Details

Part number:

SSH45N20A

Manufacturer:

Fairchild Semiconductor

File Size:

292.78kb

Download:

📄 Datasheet

Description:

Advanced power mosfet.

TAGS

SSH45N20A

Fairchild Semiconductor

📁 Related Datasheet

SSH45N20B - 200V N-Channel MOSFET (Fairchild Semiconductor)
.. SSH45N20B November 2001 SSH45N20B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.

SSH40N15 - N-CHANNEL POWER MOSFET (Samsung semiconductor)
.

SSH40N20 - N-CHANNEL POWER MOSFET (Samsung semiconductor)
.

SSH4N70 - (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS (Samsung semiconductor)
.. w w w a t a D . S 4 t e e h U m o .c .. w w w a t a D . S 4 t e e h U m o .c ..co.

SSH4N80 - (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS (Samsung semiconductor)
.. w w w a t a D . S 4 t e e h U m o .c .. w w w a t a D . S 4 t e e h U m o .c ..co.

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
.. .. .. .

SSH10N80A - Advanced Power MOSFET (Samsung)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.