Part number:
SSH10N90A
Manufacturer:
Fairchild Semiconductor
File Size:
245.63 KB
Description:
N-channel power mosfet.
SSH10N90A Datasheet (245.63 KB)
Datasheet Details
SSH10N90A Features
* BVDSS = 900V
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 900V Lower RDS(ON): 0.938Ω (Typ.) 1 2 3 RD
SSH10N90A Datasheet (245.63 KB)
Datasheet Details
SSH10N90A
Fairchild Semiconductor
245.63 KB
N-channel power mosfet.
📁 Related Datasheet
SSH10N90A Advanced Power MOSFET (Samsung Electronics)
SSH10N60A advanced power MOSFET (Fairchild)
SSH10N60B 600V N-Channel MOSFET (Fairchild)
SSH10N70 N-Channel Power MOSFET (Samsung)
SSH10N80 (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
SSH10N80A Advanced Power MOSFET (Samsung)
SSH10N80A N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSH11N90 N-Channel Power MOSFET (Samsung)
SSH10N90A Distributor