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SSH10N80A N-CHANNEL POWER MOSFET

SSH10N80A Description

N-CHANNEL POWER MOSFET .

SSH10N80A Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 25µA (Max. ) @ VDS = 800V
* Lower RDS(ON): 0.746Ω (Typ. ) ABSOLUTE MAXIMUM RATI

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N-CHANNEL POWER MOSFET Fairchild Semiconductor
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