Datasheet4U Logo Datasheet4U.com

SSH7N80A Advanced Power MOSFET

SSH7N80A Description

Advanced Power MOSFET SSH7N80A .

SSH7N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

📥 Download Datasheet

Preview of SSH7N80A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSH7N90 - N-Channel Power Mosfets (Samsung)
  • SSH7N90A - N-Channel Power Mosfets (Fairchild)
  • SSH10N60A - advanced power MOSFET (Fairchild)
  • SSH10N60B - 600V N-Channel MOSFET (Fairchild)
  • SSH10N70 - N-Channel Power MOSFET (Samsung)
  • SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
  • SSH10N80A - Advanced Power MOSFET (Samsung)
  • SSH10N90A - Advanced Power MOSFET (Samsung Electronics)

📌 All Tags

Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSH7N80A-like datasheet