K4B1G0446D - 1Gb D-die DDR3 SDRAM Specification

Samsung semiconductor

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Datasheet Details

Part number	K4B1G0446D
Manufacturer	Samsung semiconductor
File Size	1.24 MB
Description	1Gb D-die DDR3 SDRAM Specification
Datasheet	K4B1G0446D_Samsungsemiconductor.pdf

K4B1G0446D Product details

Description

11 5.0 DDR3 SDRAM Addressing 12 6.0 Absolute Maximum Ratings 13 6.1 Absolute Maximum DC Ratings 13 6.2 DRAM Component Operating Temperature Range 13 7.0 AC & DC Operating Conditions 13 7.1 Recommended DC operating Conditions (SSTL_1.5) 13 8.0 AC & DC Input Measurement Levels 14 8.1 AC and DC Logic input levels for single-ended signals 14 8.2 VREF Tolerances 15 8.3 AC and DC Logic Input Levels for Ditterential Signals 16 8.3.1 Differential signal definition 16 8.3.2 Differential swing

Features

5 3.0 Package pinout/Mechanical Dimension & Addressing 6 3.1 x4 Package Pinout (Top view) : 82ball FBGA Package(78balls + 4 balls of support balls) 6 3.2 x8 Package Pinout (Top view) : 82ball FBGA Package(78balls + 4 balls of support balls) 7 3.3 x16 Package Pinout (Top view) : 100ball FBGA Package(96balls + 4 balls of support balls) 8 3.4 FBGA Package Dimension (x4/x8) 9 3.5 FBGA Package Dimension (x16) 10 4.0 Input/Output Functional.

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Published: Apr 15, 2011 |