K4S280432F Datasheet - Samsung semiconductor

K4S280432F 128Mb F-die SDRAM Specification

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows preci.

SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 November. 2003 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November, 2003) - Preliminary spec release. Preliminary CMOS SDRAM Rev. 0.2 November. 2.

K4S280432F Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S280432F Datasheet (145.68 KB)

K4S280432F Datasheet Preview — Preview of K4S280432F PDF

Datasheet Details

Part number:

K4S280432F

Manufacturer:

Samsung semiconductor

File Size:

145.68 KB

Description:

128mb f-die sdram specification.

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K4S280432F 128Mb F-die SDRAM Specification Samsung semiconductor

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