K4S280432F-TC75

The K4S280432F-TC75 is 128Mb F-die SDRAM Specification designed by Samsung semiconductor.

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S280432F-TC75
Manufacturer	Samsung semiconductor
File Size	145.68 KB
Description	128Mb F-die SDRAM Specification
Datasheet	K4S280432F-TC75_Samsungsemiconductor.pdf
Additional preview pages of the K4S280432F-TC75 datasheet.

Product details

Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Other Datasheets by Samsung semiconductor

K4S280432F-TL75 - 128Mb F-die SDRAM Specification
K4S280432F-UC75 - 128Mb F-die SDRAM
K4S280432F-UL75 - 128Mb F-die SDRAM
K4S280432F - 128Mb F-die SDRAM Specification
K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Published: Apr 7, 2005 |