K4S280432F-TC75 Datasheet, Specification, Samsung semiconductor

K4S280432F-TC75 Features

• Specification
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latenc

PDF File Details

Part number:

K4S280432F-TC75

Manufacturer:

Samsung semiconductor

File Size:

145.68kb

Download:

📄 Datasheet

Description:

128mb f-die sdram specification. The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words

K4S280432F-TC75 Application

• Applications Ordering Information Part No. K4S280432F-TC(L)75 K4S280832F-TC(L)75 K4S281632F-TC(L)60/75 Orgainization 32M x 4 16M x 8 8M x 16 Max F

TAGS

K4S280432F-TC75

Samsung semiconductor

📁 Related Datasheet

K4S280432F-TL75 - 128Mb F-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves .

K4S280432F-UC75 - 128Mb F-die SDRAM (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.54 TSOP-II with Pb-Free e(RoHS pliant) w.DataSheRevision 1.2 ww.

K4S280432F-UL75 - 128Mb F-die SDRAM (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.54 TSOP-II with Pb-Free e(RoHS pliant) w.DataSheRevision 1.2 ww.

K4S280432F - 128Mb F-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves .

K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to .

K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to .

K4S280432D - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
.. K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics rese.

K4S280432E - 128Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan.

K4S280432E-TC75 - 128Mb E-die SDRAM Specification (Samsung semiconductor)
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan.