K4S280432M 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug.1999 Samsung Electronics reserves the right to ch.
The K4S280432M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S280432M
Manufacturer: Samsung semiconductor
File Size: 125.96 KB
Datasheet: K4S280432M_Samsungsemiconductor.pdf
Description: 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 page) -. Burst type (Sequential & Interleave)
* All inputs are sampl

Applications

* ORDERING INFORMATION Part No. K4S280432M-TC/L80 K4S280432M-TC/L1H K4S280432M-TC/L1L K4S280432M-TC/L10 Max Freq. 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL 54pin TSOP(II) InterPackage FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 8M x 4 Sense AM

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K4S280432M 128Mbit SDRAM 4Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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