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K4S511533F-YC Datasheet - Samsung semiconductor

K4S511533F-YC 8M x 16Bit x 4 Banks Mobile SDRAM

The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S511533F-YC Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S511533F-YC Datasheet (137.01 KB)

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Datasheet Details

Part number:

K4S511533F-YC

Manufacturer:

Samsung semiconductor

File Size:

137.01 KB

Description:

8m x 16bit x 4 banks mobile sdram.

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K4S511533F-YC 16Bit Banks Mobile SDRAM Samsung semiconductor

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