K4S51153LF Datasheet - Samsung semiconductor

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S51153LF Features

* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EM

K4S51153LF General Description

The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S51153LF Datasheet (108.95 KB)

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Part number:

K4S51153LF

Manufacturer:

Samsung semiconductor

File Size:

108.95 KB

Description:

8m x 16bit x 4 banks mobile sdram in 54fbga.

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K4S51153LF 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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K4S51153LF Features

K4S51153LF General Description

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