K4S51153LF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S51153LF
Manufacturer	Samsung semiconductor
File Size	108.95 KB
Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4S51153LF Datasheet
Additional preview pages of the K4S51153LF datasheet.

Product details

Description

The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support.

📁 Similar Datasheet

K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510832D - 512Mb D-die SDRAM (Samsung)
K4S560432E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632C - 256Mbit SDRAM (Samsung)
K4S561632E-UC60 - SDRAM 256Mb E-die (Samsung)
K4S561632E-UC75 - SDRAM 256Mb E-die (Samsung)

Other Datasheets by Samsung semiconductor

K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YF - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YL - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPF - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPL - 8M x 16Bit x 4 Banks Mobile SDRAM

Published: Apr 7, 2005 |