K4S51153LF 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung semiconductor

Description

K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4S51153LF
Manufacturer: Samsung semiconductor
File Size: 108.95 KB
Datasheet: K4S51153LF_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EM

Applications

* ORDERING INFORMATION Part No. K4S51163LF-Y(P)C/L/F75 K4S51163LF-Y(P)C/L/F1H K4S51163LF-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C) NOT

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K4S51153LF 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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