K4S511533F-YL
Samsung semiconductor
137.01kb
8m x 16bit x 4 banks mobile sdram. The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit
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K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S511533F-YF - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S511533F-YPC - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S511533F-YPF - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S511533F-YPL - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S51153LF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S51153LF - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .
K4S511632B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632B-TCL75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632D - 512Mb D-die SDRAM
(Samsung)
K4S510432D K4S510832D K4S511632D
Synchronous DRAM
512Mb D-die SDRAM Specification
54 TSOP-II with Lead-Free
(RoHS pliant)
INFORMATION IN THIS DO.
K4S511632M - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.