K4S56323PF-FHG Datasheet, Sdram, Samsung semiconductor

K4S56323PF-FHG Features

• Sdram
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

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Part number:

K4S56323PF-FHG

Manufacturer:

Samsung semiconductor

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📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram. The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

K4S56323PF-FHG Application

• Applications ORDERING INFORMATION Part No. K4S56323PF-F(H)G/F75 K4S56323PF-F(H)G/F90 K4S56323PF-F(H)G/F1L Max Freq. 133MHz(CL=3), 83MHz(CL2) 111MH

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K4S56323PF-FHG

Samsung semiconductor

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