K4S56323PF-FHG, K4S56323PF-FG 2M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4S56323PF-F(H)G/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4S56323PF-FHG Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S56323PF-FHG, K4S56323PF-FG. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K4S56323PF-FHG, K4S56323PF-FG
Manufacturer: Samsung semiconductor
File Size: 171.91 KB
Datasheet: K4S56323PF-FG_Samsungsemiconductor.pdf
Description: 2M x 32Bit x 4 Banks Mobile SDRAM
Note: This datasheet PDF includes multiple part numbers: K4S56323PF-FHG, K4S56323PF-FG.
Please refer to the document for exact specifications by model.

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4S56323PF-F(H)G/F75 K4S56323PF-F(H)G/F90 K4S56323PF-F(H)G/F1L Max Freq. 133MHz(CL=3), 83MHz(CL2) 111MHz(CL=3), 83MHz(CL2) 111MHz(CL=3)
* 1, 66MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - F(H)G : Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)F : L

K4S56323PF-FHG Distributors

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K4S56323PF-FG 32Bit Banks Mobile SDRAM Samsung semiconductor

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