K4S641632H-TL75 Datasheet - Samsung semiconductor

K4S641632H-TL75 64Mb H-die SDRAM Specification

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) Target spec release CMOS SDRAM Revision 0.1 (July, 2003) Preliminary spec release Revision 0.2 (August, 2003) Modified IBIS characteristic. Revision 1.0 (September, 20.

K4S641632H-TL75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S641632H-TL75 Datasheet (144.25 KB)