Part number:
K4S64163LH-RE
Manufacturer:
Samsung semiconductor
File Size:
141.86 KB
Description:
1m x 16bit x 4 banks mobile sdram in 54fbga.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad
K4S64163LH-RE Datasheet (141.86 KB)
K4S64163LH-RE
Samsung semiconductor
141.86 KB
1m x 16bit x 4 banks mobile sdram in 54fbga.
📁 Related Datasheet
K4S64163LH-RBC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RBF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RBG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RBL - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RBN - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S64163LH-RF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.