K4S64163LH-RE Datasheet, 54fbga, Samsung semiconductor

PDF File Details

Part number:

K4S64163LH-RE

Manufacturer:

Samsung semiconductor

File Size:

141.86kb

Download:

📄 Datasheet

Description:

1m x 16bit x 4 banks mobile sdram in 54fbga. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with

TAGS

K4S64163LH-RE

Samsung semiconductor

📁 Related Datasheet

K4S64163LH-RBC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RBF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RBG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RBL - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RBN - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S64163LH-RL - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung semiconductor)
K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.