K4S64163LH-RG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S64163LH-RG
Manufacturer	Samsung semiconductor
File Size	141.86 KB
Description	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4S64163LH-RG Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S64163LH-RG, K4S64163LH-RE. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S64163LH-RG datasheet.

Product details

Description

The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

K4S64163LH-RBC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBL - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBN - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Published: Apr 22, 2010 |