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K4S643233F-SP Datasheet - Samsung semiconductor

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233F-SP Features

* 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled

K4S643233F-SP General Description

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock c.

K4S643233F-SP Datasheet (90.62 KB)

Preview of K4S643233F-SP PDF

Datasheet Details

Part number:

K4S643233F-SP

Manufacturer:

Samsung semiconductor

File Size:

90.62 KB

Description:

2mx32 mobile sdram 90fbga cmos sdram.
www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev..

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K4S643233F-SP 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung semiconductor

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