K4S643233H-FHG, K4S643233H-FE Datasheet - Samsung semiconductor

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K4S643233H-FHG, K4S643233H-FE Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high per.

K4S643233H-FE_Samsungsemiconductor.pdf

K4S643233H-FHG Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S643233H-FHG, K4S643233H-FE. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S643233H-FHG, K4S643233H-FE

Manufacturer:

Samsung semiconductor

File Size:

170.23 KB

Description:

Mobile-SDRAM

Note:

This datasheet PDF includes multiple part numbers: K4S643233H-FHG, K4S643233H-FE.
Please refer to the document for exact specifications by model.

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4S643233H-F(H)E/N/G/C/L/F60 K4S643233H-F(H)E/N/G/C/L/F75 K4S643233H-F(H)E/N/G/C/L/F1H K4S643233H-F(H)E/N/G/C/L/F1L Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - F(H)E/N/G : Normal / Low / Lo

K4S643233H-FHG Distributors

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K4S643233H-FE Mobile-SDRAM Samsung semiconductor

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