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K4S643233H-FHN, K4S643233H-FE Mobile-SDRAM

K4S643233H-FHN Description

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high per.

K4S643233H-FHN Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

K4S643233H-FHN Applications

* ORDERING INFORMATION Part No. K4S643233H-F(H)E/N/G/C/L/F60 K4S643233H-F(H)E/N/G/C/L/F75 K4S643233H-F(H)E/N/G/C/L/F1H K4S643233H-F(H)E/N/G/C/L/F1L Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - F(H)E/N/G : Normal / Low / Lo

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S643233H-FHN, K4S643233H-FE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S643233H-FHN, K4S643233H-FE
Manufacturer
Samsung semiconductor
File Size
170.23 KB
Datasheet
K4S643233H-FE_Samsungsemiconductor.pdf
Description
Mobile-SDRAM
Note
This datasheet PDF includes multiple part numbers: K4S643233H-FHN, K4S643233H-FE.
Please refer to the document for exact specifications by model.

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Mobile-SDRAM Samsung semiconductor
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