K4S64323LF-xx - 2Mx32 Mobile SDRAM 90FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S64323LF-xx
Manufacturer	Samsung semiconductor
File Size	103.22 KB
Description	2Mx32 Mobile SDRAM 90FBGA
Datasheet	K4S64323LF-xx Datasheet
Additional preview pages of the K4S64323LF-xx datasheet.

Product details

Description

The K4S64323LF is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

2.5V Power Supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature range (-25° C to 85 °C). I.

📁 Similar Datasheet

K4S643232H-TC-L50 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L55 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L70 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-UC-L50 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L55 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L60 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L70 - 2M x 32 SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S64323LH-FC - 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FE - 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FF - 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FG - 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FHx - 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FL - 512K x 32Bit x 4 Banks Mobile SDRAM

Published: Jan 12, 2010 |