Datasheet4U Logo Datasheet4U.com

K4S64323LF-xx Datasheet - Samsung semiconductor

K4S64323LF-xx 2Mx32 Mobile SDRAM 90FBGA

The K4S64323LF is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock c.

K4S64323LF-xx Features

* 2.5V Power Supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at th

K4S64323LF-xx Datasheet (103.22 KB)

Preview of K4S64323LF-xx PDF

Datasheet Details

Part number:

K4S64323LF-xx

Manufacturer:

Samsung semiconductor

File Size:

103.22 KB

Description:

2mx32 mobile sdram 90fbga.

📁 Related Datasheet

K4S64323LH-FC 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FE 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FF 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FG 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FHx 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FL 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FN 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S64323LH-FN60 512K x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4S643232C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) (Samsung semiconductor)

TAGS

K4S64323LF-xx 2Mx32 Mobile SDRAM 90FBGA Samsung semiconductor

Image Gallery

K4S64323LF-xx Datasheet Preview Page 2 K4S64323LF-xx Datasheet Preview Page 3

K4S64323LF-xx Distributor