K4S64323LH-FN60 512K x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high per.

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Datasheet Specifications

Part number: K4S64323LH-FN60
Manufacturer: Samsung semiconductor
File Size: 181.37 KB
Datasheet: K4S64323LH-FN60_Samsungsemiconductor.pdf
Description: 512K x 32Bit x 4 Banks Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4S64323LH-F(H)E/N/G/C/L/F60 K4S64323LH-F(H)E/N/G/C/L/F75 K4S64323LH-F(H)E/N/G/C/L/F1H Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) LVCMOS 90 FBGA Leaded (Lead Free) Interface Package K4S64323LH-F(H)E/N/G/C/L/F1L 105MHz(CL=3)
* 1 www. DataSheet4U. com - F(H)E/N/G

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K4S64323LH-FN60 512K 32Bit Banks Mobile SDRAM Samsung semiconductor

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