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K4X56323PG Datasheet - Samsung semiconductor

8M x32 Mobile-DDR SDRAM

K4X56323PG Features

* Mobile-DDR SDRAM

* 1.8V power supply, 1.8V I/O power

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* MRS cycle with address key progr

K4X56323PG General Description

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activa.

K4X56323PG Datasheet (291.73 KB)

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Datasheet Details

Part number:

K4X56323PG

Manufacturer:

Samsung semiconductor

File Size:

291.73 KB

Description:

8m x32 mobile-ddr sdram.

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K4X56323PG x32 Mobile-DDR SDRAM Samsung semiconductor

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