K7Q161852A Datasheet (Samsung semiconductor) - (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

K7Q161852A, (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1.

Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 values for WRITE ALL B

K7Q161852A Features

* 2) Page 3,4 PIN NAME VDDQ 3) Page 10, OPERATING CONTITIONS 4) Page 11 AC TEST CONTITIONS 2. Amendment 1) Page 15 BOUNDARY SCAN ORDER EXIT 1. Icc, Isb addition 2. 1.8V Vddq addition 1. Reserved pin for high density name change from NC to Vss/SA 1. Final SPEC release 2. Modify thermal resistance Draft