K7Q161862B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Samsung semiconductor

Description

www.DataSheet4U.com K7Q163662B K7Q161862B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev.No..
Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Refer.

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Datasheet Specifications

Part number: K7Q161862B
Manufacturer: Samsung semiconductor
File Size: 362.69 KB
Datasheet: K7Q161862B_Samsungsemiconductor.pdf
Description: (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.
* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O.
* Full data coherency, providing most

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K7Q161862B K7Q161862B K7Q163662B 512Kx36 1Mx18 QDRTM SRAM Samsung semiconductor

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