K7Q161862B - (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Samsung semiconductor

The K7Q161862B by Samsung semiconductor is a (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM. Below is the official datasheet preview.

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K7Q161862B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7Q161862B** (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7Q161862B
Manufacturer	Samsung semiconductor
File Size	362.69 KB
Description	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
Datasheet	K7Q161862B_Samsungsemiconductor.pdf
Additional preview pages of the K7Q161862B datasheet.

K7Q161862B Product details

Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No Connect 3 2 Notes: 1. C, C, K or K cannot be set to VREF voltage.2. When ZQ pin is directly connected to VDD output impedance is set to minimum val

Features

1.8V/2.5V +0.1V/-0.1V Power Supply.
I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
Separate independent read and write data ports with concurrent read and write operation.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed early write.
Registered address, control and data input/output.
DDR(Double Data Rate) Interface on read and write.

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K7Q163654A - (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM

Published: Mar 23, 2007 |