K7Q161862B Datasheet (Samsung semiconductor) - (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

K7Q161862B, (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test D

www.DataSheet4U.com K7Q163662B K7Q161862B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev.

No.

0.0 1.0 History 1.

Initial document.

Final spec release Draft Date Jan.

27, 2004 Mar.

18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specifications.

SAMSUNG Electronics will evaluate and reply to your requests and questions on

K7Q161862B Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.

* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and write operation

* HSTL I/O.

* Full data coherency, providing most