K7Q163654A Datasheet - Samsung semiconductor

K7Q163654A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM

W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1. Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 values for WRITE ALL B.

K7Q163654A Features

* 2) Page 3,4 PIN NAME VDDQ 3) Page 10, OPERATING CONTITIONS 4) Page 11 AC TEST CONTITIONS 2. Amendment 1) Page 15 BOUNDARY SCAN ORDER EXIT 1. Icc, Isb addition 2. 1.8V Vddq addition 1. Reserved pin for high density name change from NC to Vss/SA 1. Release Icc. part # -20 -16 -13 -10 x18 From 500 To 5

K7Q163654A Datasheet (389.08 KB)

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Datasheet Details

Part number:

K7Q163654A

Manufacturer:

Samsung semiconductor

File Size:

389.08 KB

Description:

(k7q161854a / k7q163654a) 1mx18-bit qdr sram.

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K7Q163654A K7Q161854A K7Q163654A 1Mx18-bit QDR SRAM Samsung semiconductor

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