K7Q163652A, K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Samsung semiconductor

Description

www.DataSheet4U.com K7Q163652A K7Q161852A Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev.No..
W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pi.

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K7Q163652A Datasheet Preview — This datasheet PDF includes multiple part numbers: K7Q163652A, K7Q161852A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K7Q163652A, K7Q161852A
Manufacturer: Samsung semiconductor
File Size: 384.84 KB
Datasheet: K7Q161852A_Samsungsemiconductor.pdf
Description: (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
Note: This datasheet PDF includes multiple part numbers: K7Q163652A, K7Q161852A.
Please refer to the document for exact specifications by model.

Features

* 2) Page 3,4 PIN NAME VDDQ 3) Page 10, OPERATING CONTITIONS 4) Page 11 AC TEST CONTITIONS 2. Amendment 1) Page 15 BOUNDARY SCAN ORDER EXIT 1. Icc, Isb addition 2. 1.8V Vddq addition 1. Reserved pin for high density name change from NC to Vss/SA 1. Final SPEC release 2. Modify thermal resistance Draft

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K7Q161852A K7Q161852A K7Q163652A 512Kx36 1Mx18 QDRTM SRAM Samsung semiconductor

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