K7Q163652A Datasheet - Samsung semiconductor

K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1. Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 values for WRITE ALL B.

K7Q163652A Features

* 2) Page 3,4 PIN NAME VDDQ 3) Page 10, OPERATING CONTITIONS 4) Page 11 AC TEST CONTITIONS 2. Amendment 1) Page 15 BOUNDARY SCAN ORDER EXIT 1. Icc, Isb addition 2. 1.8V Vddq addition 1. Reserved pin for high density name change from NC to Vss/SA 1. Final SPEC release 2. Modify thermal resistance Draft

K7Q163652A Datasheet (384.84 KB)

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Datasheet Details

Part number:

K7Q163652A

Manufacturer:

Samsung semiconductor

File Size:

384.84 KB

Description:

(k7q161852a / k7q163652a) 512kx36 & 1mx18 qdrtm b2 sram.

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K7Q163652A K7Q161852A K7Q163652A 512Kx36 1Mx18 QDRTM SRAM Samsung semiconductor

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