K7Q161864B_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K7Q163664B, K7Q161864B
Manufacturer:
Samsung semiconductor
File Size:
370.30 KB
Description:
(k7q161864b / k7q163664b) 512kx36 & 1mx18 qdr tm b4 sram.
Note:
This datasheet PDF includes multiple part numbers: K7Q163664B, K7Q161864B.
Please refer to the document for exact specifications by model.
K7Q163664B, K7Q161864B, (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
Input Clock Input Clocks for Output data Address Inputs Data Inputs Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage Output Driver Impedance Control Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Tes
www.DataSheet4U.com K7Q163664B K7Q161864B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev.
No.
0.0 1.0 History 1.
Initial document.
1.
Final spec release Draft Date Jan.
27, 2004 Mar.
18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO., LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on
K7Q163664B Features
* 1.8V/2.5V +0.1V/-0.1V Power Supply.
* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Separate independent read and write data ports with concurrent read and write operation.
* HSTL I/O.
* Full data coherency, providing most
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