K7Q163664B Datasheet - Samsung semiconductor

(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

K7Q163664B Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.

* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and write operation.

* HSTL I/O.

* Full data coherency, providing most

K7Q163664B General Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage Output Driver Impedance Control Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Tes.

K7Q163664B Datasheet (370.30 KB)

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Datasheet Details

Part number:

K7Q163664B

Manufacturer:

Samsung semiconductor

File Size:

370.30 KB

Description:

(k7q161864b / k7q163664b) 512kx36 & 1mx18 qdr tm b4 sram.
www.DataSheet4U.com K7Q163664B K7Q161864B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev. No. .

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K701 2SK701 (ETC)

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K7Q163664B K7Q161864B K7Q163664B 512Kx36 1Mx18 QDR SRAM Samsung semiconductor

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K7Q163664B Features

K7Q163664B General Description

Datasheet Details

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K7Q163664B Distributor