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K7Q163662B

(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

K7Q163662B Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.

* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and write operation

* HSTL I/O.

* Full data coherency, providing most

K7Q163662B General Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test D.

K7Q163662B Datasheet (362.69 KB)

Preview of K7Q163662B PDF

Datasheet Details

Part number:

K7Q163662B

Manufacturer:

Samsung semiconductor

File Size:

362.69 KB

Description:

(k7q161862b / k7q163662b) 512kx36 & 1mx18 qdrtm b2 sram.
www.DataSheet4U.com K7Q163662B K7Q161862B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev. No. .

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TAGS

K7Q163662B K7Q161862B K7Q163662B 512Kx36 1Mx18 QDRTM SRAM Samsung semiconductor

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