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K7Q163662B, K7Q161862B - (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

The K7Q163662B by Samsung semiconductor is a (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM. Below is the official datasheet preview.

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Official preview page of the K7Q163662B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number K7Q163662B, K7Q161862B
Manufacturer Samsung semiconductor
File Size 362.69 KB
Description (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
Datasheet download datasheet K7Q161862B_Samsungsemiconductor.pdf
Note This datasheet PDF includes multiple part numbers: K7Q163662B, K7Q161862B.
Please refer to the document for exact specifications by model.
Additional preview pages of the K7Q163662B datasheet.

K7Q163662B Product details

Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No Connect 3 2 Notes: 1. C, C, K or K cannot be set to VREF voltage.2. When ZQ pin is directly connected to VDD output impedance is set to minimum val

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