K7Q161864B Datasheet (Samsung semiconductor) - (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

K7Q161864B, (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

Input Clock Input Clocks for Output data Address Inputs Data Inputs Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage Output Driver Impedance Control Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Tes

www.DataSheet4U.com K7Q163664B K7Q161864B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev.

No.

0.0 1.0 History 1.

Initial document.

Final spec release Draft Date Jan.

27, 2004 Mar.

18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specifications.

SAMSUNG Electronics will evaluate and reply to your requests and questions on

K7Q161864B Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.

* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and write operation.

* HSTL I/O.

* Full data coherency, providing most