K7R323682M Datasheet - Samsung semiconductor

1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

K7R323682M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O .

* Separate independent read and write data ports with concurrent read and

K7R323682M General Description

on page 2 and add HSTL I/O comment Draft Date June, 30 2001 Dec. 5 2001 Remark Advance Preliminary 0.2 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 1. 2. 3. 4. 5. 1. 2. 3. 4. Add 4Mx9 Organizat.

K7R323682M Datasheet (201.88 KB)

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Part number:

K7R323682M

Manufacturer:

Samsung semiconductor

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201.88 KB

Description:

1mx36 & 2mx18 & 4mx9 qdrtm ii b2 sram.
K7R323682M K7R321882M K7R320982M Document Title 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision His.

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K7R323682M 1Mx36 2Mx18 4Mx9 QDRTM SRAM Samsung semiconductor

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K7R323682M Features

K7R323682M General Description

Datasheet Details

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