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K7R323682M 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

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Description

K7R323682M K7R321882M K7R320982M Document Title 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision His.
on page 2 and add HSTL I/O comment Draft Date June, 30 2001 Dec.

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Datasheet Specifications

Part number
K7R323682M
Manufacturer
Samsung semiconductor
File Size
201.88 KB
Datasheet
K7R323682M_Samsungsemiconductor.pdf
Description
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O .
* Separate independent read and write data ports with concurrent read and

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