K7R323684M Datasheet - Samsung semiconductor

1M x 36 & 2M x 18 QDR II b4 SRAM

K7R323684M General Description

on page 2 and add HSTL I/O comment 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 0.4 1. Add -FC25 part(AC Characteristics) 2. Add AC electrical characteristics. 3. Change AC timing character.

K7R323684M Datasheet (202.00 KB)

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K7R323684M

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Samsung semiconductor

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202.00 KB

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1m x 36 & 2m x 18 qdr ii b4 sram.
K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM .

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K7R323684M General Description

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