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K7R641882M Datasheet - Samsung semiconductor

2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

K7R641882M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and w

K7R641882M General Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when l.

K7R641882M Datasheet (364.61 KB)

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Datasheet Details

Part number:

K7R641882M

Manufacturer:

Samsung semiconductor

File Size:

364.61 KB

Description:

2mx36 & 4mx18 & 8mx9 qdrtm ii b2 sram.
K7R643682M K7R641882M K7R640982M Document Title Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM R.

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K7R641882M 2Mx36 4Mx18 8Mx9 QDRTM SRAM Samsung semiconductor

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