K7R641882M Datasheet - Samsung semiconductor

K7R641882M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when l.

K7R643682M K7R641882M K7R640982M Document Title Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Update AC timing characteristics. 2. Change the JTAG instruction coding. 1. Change the AC timing characteristics. (-25/-20 parts) 2. Correct the overshoot and undershoot timing diagrams. 3. Change the JTAG Block diagrams. 4. Update the Boundary scan exit order. 1. Correct the JTAG ID .

K7R641882M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

* Separate independent read and write data ports with concurrent read and w

K7R641882M_Samsungsemiconductor.pdf