K7R641882M Datasheet - Samsung semiconductor

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K7R641882M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

K7R643682M K7R641882M K7R640982M Document Title Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM R.
Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ.

K7R641882M_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K7R641882M

Manufacturer:

Samsung semiconductor

File Size:

364.61 KB

Description:

2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Separate independent read and write data ports with concurrent read and w

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K7R641882M 2Mx36 4Mx18 8Mx9 QDRTM SRAM Samsung semiconductor

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