K9F1208U0M-YIB0 Datasheet - Samsung semiconductor

K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be pe.

K9F1208U0M-YCB0, K9F1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue Draft Date Oct. 27th 2000 Remark Advanced Information 0.1 1. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare area. When SE is high, the spare area is not accessible for reading or programming. SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading or program.

K9F1208U0M-YIB0 Features

* Voltage Supply : 2.7V~3.6V

* Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by four planes

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte

* 528-Byte Page Read

K9F1208U0M-YIB0 Datasheet (1.11 MB)