KFG2816Q1M-DEB Datasheet (Samsung semiconductor) - (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory

KFG2816Q1M-DEB, (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory

Added OTP erase case NOTE 6.

Revised case definitions of Interrupt Status Register 7.

Added a NOTE to Command register 8.

Added ECClogSector Information table 9.

Removed ’data unit based data handling’ from description of Device Operation 10.

Revised description on Warm/Hot/NAND Flash Core Reset

OneNAND128 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND128 Part No.

KFG2816Q1M-DEB KFG2816U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 3.3V(2.7V~3.6V) Temperature Extended Industrial PKG 67FBGA(LF)/48TSOP1 67FBGA(LF)/48TSOP1 Version: Ver.

1.1 Date: Dec.

23, 2005 1 OneNAND128 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS

KFG2816Q1M-DEB Features

* Design Technology: 0.12µm

* Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM

* NAND Array - Page Size : (1K+32)