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KFG2816Q1M-DEB

(KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory

KFG2816Q1M-DEB Features

* Design Technology: 0.12µm

* Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM

* NAND Array - Page Size : (1K+32)

KFG2816Q1M-DEB General Description

5. Added OTP erase case NOTE 6. Revised case definitions of Interrupt Status Register 7. Added a NOTE to Command register 8. Added ECClogSector Information table 9. Removed ’data unit based data handling’ from description of Device Operation 10. Revised description on Warm/Hot/NAND Flash Core Reset .

KFG2816Q1M-DEB Datasheet (1.24 MB)

Preview of KFG2816Q1M-DEB PDF

Datasheet Details

Part number:

KFG2816Q1M-DEB

Manufacturer:

Samsung semiconductor

File Size:

1.24 MB

Description:

(kfg2816q1m-deb / kfg2816u1m-dib) flash memory.
OneNAND128 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND128 Part No. KFG2816Q1M-DEB KFG2816U1M-DIB VCC(core & IO) 1.8V(1.7.

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TAGS

KFG2816Q1M-DEB KFG2816Q1M-DEB KFG2816U1M-DIB Flash Memory Samsung semiconductor

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