M366S6453CTS PC133/PC100 Unbuffered DIMM

Samsung semiconductor

M366S6453CTS Description

www.DataSheet4U.com M366S6453CTS M366S6453CTS SDRAM DIMM PC133/PC100 Unbuffered DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Syn.
The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module.

M366S6453CTS Features

* 1120 1120 1040 1040 mA 1 ICC5 ICC6 2,000 1,840 1,760 1,760 48 24 mA mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

📥 Download Datasheet

M366S6453CTS Datasheet Preview — Preview of M366S6453CTS PDF

Datasheet Details

Part number: M366S6453CTS
Manufacturer: Samsung semiconductor
File Size: 142.71 KB
Datasheet: M366S6453CTS_Samsungsemiconductor.pdf
Description: PC133/PC100 Unbuffered DIMM

📁 Related Datasheet

M366S0823CT0 - SDRAM DIMM (Samsung Semiconductor)
M366S0823CTF - SDRAM DIMM (Samsung Semiconductor)
M366S0823CTL - SDRAM DIMM (Samsung Semiconductor)
M366S0823CTS - SDRAM DIMM (Samsung Semiconductor)
M366S0823DTF - SDRAM DIMM (Samsung Semiconductor)
M366S0823DTS - SDRAM DIMM (Samsung Semiconductor)
M366S0823ETS - SDRAM DIMM (Samsung Semiconductor)
M366S0823FTS - SDRAM DIMM (Samsung Semiconductor)

📌 All Tags

PC133 PC100 Unbuffered DIMM Samsung semiconductor

Samsung semiconductor M366S6453CTS-like datasheet

M366S6453ET - SDRAM Unbuffered Module
M366S0924ETS-C7A - (M3xxSxxxxETx-C7A) SDRAM Unbuffered Module
M366S1623DT0 - PC100 Unbuffered DIMM
M366S1623ET0 - Synchronous DRAMs
M366S1654CTS - PC133/PC100 Unbuffered DIMM
M366S1654ETS - SDRAM Unbuffered Module