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M366S6453CTS

PC133/PC100 Unbuffered DIMM

M366S6453CTS Features

* 1120 1120 1040 1040 mA 1 ICC5 ICC6 2,000 1,840 1,760 1,760 48 24 mA mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

M366S6453CTS General Description

The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF de.

M366S6453CTS Datasheet (142.71 KB)

Preview of M366S6453CTS PDF

Datasheet Details

Part number:

M366S6453CTS

Manufacturer:

Samsung semiconductor

File Size:

142.71 KB

Description:

Pc133/pc100 unbuffered dimm.
www.DataSheet4U.com M366S6453CTS M366S6453CTS SDRAM DIMM PC133/PC100 Unbuffered DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Syn.

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M366S6453CTS PC133 PC100 Unbuffered DIMM Samsung semiconductor

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