M470L6423EN Datasheet - Samsung semiconductor

M470L6423EN 512MB Unbuffered SODIMM

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS7 CK0,CK0 ~ CK1, CK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS WE Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Write e.

512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC Revision 1.3 March. 2004 Rev. 1.3 March. 2004 512MB Unbuffered SODIMM(based on sTSOP) Revision History Revision 1.0 (May, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. Revision 1.2 (December, 2003) - Corrected typo. Revision 1.3 (March, 2004) - Corrected package dimension. DDR SDRAM Rev. 1.3 March. 2004 512MB Unbuffered.

M470L6423EN Features

* itions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK input

M470L6423EN_Samsungsemiconductor.pdf