M470L6423EN Datasheet - Samsung semiconductor

M470L6423EN, 512MB Unbuffered SODIMM

512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC.
Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS7 CK0,CK0 ~ CK1, CK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS WE Function Address input (Multiplexed) Bank Selec.

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M470L6423EN_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

M470L6423EN

Manufacturer:

Samsung semiconductor

File Size:

145.93 KB

Description:

512MB Unbuffered SODIMM

Features

* itions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK input

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M470L6423EN 512MB Unbuffered SODIMM Samsung semiconductor

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