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MR16R162GDF0

(MR1xR1622(4/8/G)DF0) Key Timing Parameters

MR16R162GDF0 Features

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module

* Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x

MR16R162GDF0 General Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68.

MR16R162GDF0 Datasheet (442.47 KB)

Preview of MR16R162GDF0 PDF

Datasheet Details

Part number:

MR16R162GDF0

Manufacturer:

Samsung semiconductor

File Size:

442.47 KB

Description:

(mr1xr1622(4/8/g)df0) key timing parameters.
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002)
* First copy.
* Based on the 1.4 ver. (July 2002) 256/288Mbit A.

📁 Related Datasheet

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MR16R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
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MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
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MR16R162GDF0 MR1xR16224 GDF0 Key Timing Parameters Samsung semiconductor

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