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MR18R1622DF0, MR18R16224DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters

MR18R1622DF0 Description

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy.* Based on the 1.4 ver.(July 2002) 256/288Mbit A.
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78.

MR18R1622DF0 Features

* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module
* Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x

MR18R1622DF0 Applications

* including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (R

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This datasheet PDF includes multiple part numbers: MR18R1622DF0, MR18R16224DF0. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MR18R1622DF0, MR18R16224DF0
Manufacturer
Samsung semiconductor
File Size
442.47 KB
Datasheet
MR18R16224DF0_Samsungsemiconductor.pdf
Description
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
Note
This datasheet PDF includes multiple part numbers: MR18R1622DF0, MR18R16224DF0.
Please refer to the document for exact specifications by model.

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MR1xR16224 GDF0 Key Timing Parameters Samsung semiconductor
Samsung semiconductor MR18R1622DF0-like datasheet