K9LCGD8U1M-B Datasheet, Memory, Samsung

✔ K9LCGD8U1M-B Features

Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit

such as solid state file storage and other portable applications requiring nonvolatility. 1.2 FEATURES
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K9LCGD8U1M-B

Samsung

1.10 MB

Flash memory. Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The devic

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K9LCGD8U1M-B FLASH MEMORY Samsung