K4M51323LC-SN - Mobile-SDRAM

Samsung semiconductor

K4M51323LC-SN Datasheet Preview — Preview of K4M51323LC-SN PDF

Datasheet Details

Part number	K4M51323LC-SN
Manufacturer	Samsung semiconductor
File Size	181.67 KB
Description	Mobile-SDRAM
Datasheet	K4M51323LC-SN_Samsungsemiconductor.pdf

K4M51323LC-SN Product details

Description

The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Par.

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Published: Dec 24, 2009 |