K6X8016T3B 512Kx16 bit Low Power Full CMOS Static RAM

Samsung semiconductor

K6X8016T3B Description

K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM .
The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6X8016T3B Features

* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three state outputs

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Datasheet Details

Part number: K6X8016T3B
Manufacturer: Samsung semiconductor
File Size: 159.46 KB
Datasheet: K6X8016T3B_Samsungsemiconductor.pdf
Description: 512Kx16 bit Low Power Full CMOS Static RAM

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512Kx16 bit Low Power Full CMOS Static RAM Samsung semiconductor

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