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K7I163684B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM

K7I163684B Description

K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THI.
Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Burst Count Address Inputs Address Inputs Data Inputs Outputs Read, Wri.

K7I163684B Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future frequency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Pipelined, double-data rate operation.
* Common data input/output

K7I163684B Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

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Datasheet Details

Part number
K7I163684B
Manufacturer
Samsung semiconductor
File Size
454.90 KB
Datasheet
K7I163684B_Samsungsemiconductor.pdf
Description
512Kx36 & 1Mx18 DDRII CIO b4 SRAM

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512Kx36 1Mx18 DDRII CIO SRAM Samsung semiconductor
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