K7Q161864B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

Samsung semiconductor

K7Q161864B Description

www.DataSheet4U.com K7Q163664B K7Q161864B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev.No..
Input Clock Input Clocks for Output data Address Inputs Data Inputs Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage.

K7Q161864B Features

* 1.8V/2.5V +0.1V/-0.1V Power Supply.
* I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Separate independent read and write data ports with concurrent read and write operation.
* HSTL I/O.
* Full data coherency, providing most

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Datasheet Details

Part number: K7Q161864B
Manufacturer: Samsung semiconductor
File Size: 370.30 KB
Datasheet: K7Q161864B_Samsungsemiconductor.pdf
Description: (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

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K7Q161864B K7Q163664B 512Kx36 1Mx18 QDR SRAM Samsung semiconductor

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