K7S3218T4C - (K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Samsung semiconductor

K7S3218T4C Datasheet Preview — Preview of K7S3218T4C PDF

Datasheet Details

Part number	K7S3218T4C
Manufacturer	Samsung semiconductor
File Size	478.71 KB
Description	(K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM
Datasheet	K7S3218T4C_Samsungsemiconductor.pdf

K7S3218T4C Product details

Description

Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Notes: Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply (1.8 V) Output Power Supply (1.5V) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No Connect 2 1

Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future frequency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V.
Separate independent read and write data ports with concurrent read and write operation.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed late write.
Read latency: 2 clock cycles.
Registered address, control and data.

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Published: Dec 5, 2008 |