DS065016G3 Datasheet - Sanan

DS065016G3 SiC Schottky Barrier Diode

VRRM 650 V IF(135℃) 24 * * A QC 22 * nC TO-247-3L Marking DS065016G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-.

Datasheet ADS065J016G3 650V/16A SiC Schottky Barrier Diode Characteristic AEC-Q101 Qualified Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low heat dissipation requirements Application Switching power supply Power factor correction Motor drive，traction Charging pile Device ADS065J016G3 Packag.

DS065016G3 Datasheet (288.81 KB)