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2SA1380 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
  • Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Datasheet Details

Part number 2SA1380
Manufacturer Sanyo Semicon Device
File Size 39.05 KB
Description PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.
Published: |