2SA1380 Datasheet - Sanyo Semicon Device

2SA1380 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1380 Features

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.

* Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8

Datasheet Details

2SA1380

Sanyo Semicon Device

39.05 KB

Pnp/npn epitaxial planar silicon transistors.

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