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2SA1381 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • Package Dimensions unit:mm 2009A [2SA1381/2SC3503].
  • High breakdown voltage : VCEO≥300V.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
  • Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

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Datasheet Details

Part number 2SA1381
Manufacturer Sanyo Semicon Device
File Size 156.42 KB
Description PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions B : Base C : Collector E : Emitter Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.
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