2SA1381 Datasheet - Sanyo Semicon Device

2SA1381 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1381 Features

* Package Dimensions unit:mm 2009A [2SA1381/2SC3503]

* High breakdown voltage : VCEO≥300V.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.

* Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximu

Datasheet Details

2SA1381

Sanyo Semicon Device

156.42 KB

Pnp/npn epitaxial planar silicon transistors.

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