* On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ.
* Small-sized package : CP.
* Large current capacity : IC=500mA. Package Dimensions unit:mm 2018A [2SA1519/2SC3913] ( ) : 2SA1519 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emit
2SA1519
Sanyo Semicon Device
42.03 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2160A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1519/2SC3913
Switching Applications (with Bias Resistance)
Applications
.
📁 Related Datasheet
2SA1510 - Epitaxial Planar Silicon Transistor
(Sanyo)
This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://../
This Material Copyrighted By Its Respective Manu.
2SA1511 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
(Sanyo Semicon Device)
..
..
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2SA1511 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
(Sanyo)
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2SA1512 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1.
2SA1513 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1513
DESCRIPTION ·With TO-3PML package ·High cur.
2SA1513 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SA1513
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collec.
2SA1514K - High-voltage Amplifier Transistor
(Rohm)
2SA1579 / 2SA1514K
High-voltage Amplifier Transistor (-120V,-50mA)
Datasheet
Parameter
VCEO IC
Value
-120V -50mA
lFeatures
1)High breakdown voltag.
2SA1514K - Transistor
(Kexin)
SMD Type
High-voltage Amplifier Transistor 2SA1514K
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
High breakdown vol.
