2SA1787 Datasheet - Sanyo Semicon Device

2SA1787 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1787 Features

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP).

* Adoption of FBET processes. Package Dimensions unit:mm 2064 [2SA1787/2SC4650] ( ) : 2SA1786 E : Emitter C : Collector B : Base Speci

Datasheet Details

2SA1787

Sanyo Semicon Device

158.69 KB

Pnp/npn epitaxial planar silicon transistors.

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