2SA1787 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1787
Manufacturer	Sanyo Semicon Device
File Size	158.69 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1787_SanyoSemiconDevice.pdf

High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP).
Adoption of FBET processes. Package Dimensions unit:mm 2064 [2SA1787/2SC4650] ( ) : 2SA1786 E : Emitter C : Collector B : Base Specifications SANYO : NMP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Colle.

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Published: Mar 22, 2005 |