* High DC current gain (hFE=800 to 3200).
* Large current capacity.
* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
* High VEBO (VEBO≥15V). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collect
2SC3068
Sanyo Semicon Device
102.22 KB
Npn transistor.
Ordering number:EN943G
NPN Epitaxial Planar Silicon Transistor
2SC3068
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
<.
📁 Related Datasheet
2SC3060 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3060
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Ar.
2SC3060 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·Ultra-fast switching .
2SC3061 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3061
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Ar.
2SC3061 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·Ultra-fast switching .
2SC3063 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3063
Silicon NPN triple diffusion planar type
For TV video output amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3..
2SC3063 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3063
DESCRIPTION ·With TO-126 package ·High VCEO.
2SC3063 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3063
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Sa.
2SC3063 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3063
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
,。 High VCEO, .
